Self-aligned Metal S/D InP MOSFETs using Metallic Ni-InP alloys

Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany

Tagungsband: IPRM 2011

Seiten: 4Sprache: EnglischTyp: PDF

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Kim, S. H.; Yokoyama, M.; Taoka, N.; Iida, R.; Lee, S.; Nakane, R.; Takenaka, M.; Takagi, S. (The Univ. of Tokyo7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan)
Urabe, Y.; Miyata, N.; Yasuda, T. (National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan)
Yamada, H.; Fukuhara, N.; Hata, M. (Sumitomo Chemical Co. Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294, Japan)

In this work, Ni-InP alloys formed by direct reaction between Ni and InP were evaluated as a S/D metal material. The sheet resistance of Ni-InP has found to be 35-90 Ohm/square, less than that of doped N+ layer formed by ion implantation, conventional method for S/D formation. The Ni-InP alloys also show ohmic and Schottky behavior for unintentionally doped InP (lightly n-InP) and p-InP, respectively. Using this novel material of Ni-InP, InP MOSFETs with the self-aligned metal S/D structure were fabricated with the process temperature under 300 °C. MOSFETs shows normal transistor behavior with high Ion/Ioff ratio of 106 and low subthreshold swing of 120 mV/dec attributable to Ni-InP/InP junctions.