Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs
Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany
Tagungsband: IPRM 2011
Seiten: 3Sprache: EnglischTyp: PDF
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Autoren:
Morassi, Luca; Verzellesi, Giovanni; Larcher, Luca (DISMI, University of Modena and Reggio Emilia, Reggio Emilia, Italy)
Zhao, Han; Lee, Jack C. (Department of Electrical and Computer Engineering, The University of Texas at Austin, TX, USA)
Inhalt:
The accuracy of the split-CV mobility extraction method is analyzed in implant-free, buried-channel InGaAs MOS-HEMTs with Al2O3 gate dielectric through a "simulated experiment" procedure. The different error sources affecting the method accuracy are pointed out. As a result of these errors, the split-CV mobility can appreciably underestimate the actual channel mobility under on-state conditions.