High-speed directly-modulated lasers with photon-photon resonance

Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany

Tagungsband: IPRM 2011

Seiten: 4Sprache: EnglischTyp: PDF

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Dumitrescu, M.; Telkkälä, J.; Karinen, J.; Viheriälä, J.; Laakso, A. (Optoelectronics Research Centre, Tampere University of Technology, Tampere, Finland)
Afzal, S.; Reithmaier, J.-P. (Institute of Nanostructure technologies and Analytics, University of Kassel, Kassel, Germany)
Kamp, M. (Technishe Physik, University of Würzburg, Würzburg, Germany)
Melanen, P.; Uusimaa, P. (Modulight Inc., Tampere, Finland)
Greadye, D.; Eisenstein, G. (Electrical Engineering Department, Technion, Haifa, Israel)

The epitaxial overgrowth, employed in the fabrication of conventional buried gratings, is avoided by using lateral corrugations of the ridge-waveguide as surface gratings, thus decreasing the fabrication complexity, increasing the yield and reducing the fabrication cost of distributed feedback and distributed Bragg reflector edge-emitting lasers. Single- and multiple-contact edge-emitting lasers with laterally-corrugated ridge waveguide gratings have been developed both on GaAs and InP substrates with the aim to exploit the photon-photon resonance in order to extend their direct modulation bandwidth. The characteristics of such surface-grating-based lasers emitting both at 1.3 and 1.55 µm are presented, including photon-photon-resonance-extended small-signal modulation bandwidth in excess of 20 GHz achieved with a 1.6 mm long single-contact device under direct modulation. Similarly structured devices, with shorter lengths are expected to exceed 40 GHz small-signal modulation bandwidth under direct modulation.