Integration of III/V lattice-matched on (001) Silicon for optoelectronic

Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany

Tagungsband: IPRM 2011

Seiten: 2Sprache: EnglischTyp: PDF

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Kunert, Bemardette (NAsP III/V GmbH, Germany)
Volz, Kerstin; Stolz, Wolfgang (Philipps-University Marburg, Germany)

GaP based compound material systems allow for the lattice matched integration on (001) Silic on substrate. In particular the novel dilute nitride Ga(NAsP), which reveals a direct band gap, enables the defect-free monolithic growth of a III/V laser material on Si. This lattice matched approach offers the possibility for a high-quality, low defect density integration of a III/V laser diode potentially leading to long-term stable laser devices. The present paper introduces this novel integration concept and discusses the challenges and opportunities of the process transfer from 2 inch Si wafer towards 300 mm wafer size.