Measurement of the Interface Specific Resistivity of a Heavily Doped n-Type InP/GaInAs Heterostructure
Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany
Tagungsband: IPRM 2011
Seiten: 3Sprache: EnglischTyp: PDF
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Autoren:
Halevy, Ran; Cohen, Shimon; Gavrilov, Arkadi; Ritter, Dan (Department of Electrical Engineering, Technion, Israel Institute of Technology, Technion City, Haifa 32000, Israel)
Inhalt:
We present measurements of the specific resistivity of a heavily doped n-type InP/InGaAs interface. Transmission line measurements of an InP/GaInAs heterostucture were carried out before and after etching of the GaInAs layer between the pads. The specific interface resistivity was extracted numerically, and error bars were calculated. The obtained specific interface resistivity, averaged on several TLM structures across the wafer, was 1.7 ± 0.36 [Ω-µm2].