Two-bandgap semiconductor optical amplifier integrated using quantum well intermixing
Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany
Tagungsband: IPRM 2011
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Lee, Ko-Hsin; Webb, Roderick P.; Manning, Robert J.; Roycroft, Brendan; O’Callaghan, James; Peters, Frank H.; Corbett, Brian (Tyndall National Institute, Lee Maltings, Cork, Ireland)
Webb, Roderick P.; Manning, Robert J.; Peters, Frank H. (Department of Physics, University College Cork, Cork, Ireland)
Inhalt:
We propose and fabricate a two-bandgap SOA device integrated monolithically using a quantum well intermixing technique on an AlInGaAs-based multiple quantum well structure. With increased current injection into the wide bandgap section, the gain peak wavelength shows a shift to the blue and the gain at shorter wavelengths is significantly enhanced. The 3-dB gain bandwidth is extended with this two-bandgap SOA device, demonstrating the potential for realisation of wide bandwidth SOAs. Moreover, it is found that saturation output power depends on the direction of propagation, which may arise from a lower differential gain and/or a shorter carrier lifetime in the wide bandgap section.