Waveguide AlInAs/GaInAs APD for 40Gb/s optical receivers
Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany
Tagungsband: IPRM 2011
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Lahrichi, M.; Glastre, G.; Paret, J.-F.; Carpentier, D.; Lanteri, D.; Lagay, N.; Decobert, J.; Achouche, M. (Alcatel Thales III-V Lab, joint lab: Alcatel-Lucent Bell Labs and Thales R&T, Route de Nozay, 91460 Marcoussis, France)
Inhalt:
We show an evanescent waveguide coupling AlInAs/InGaAs SAGM APD using a short multimode waveguide for 40Gb/s optical transmission. Very thin avalanche and absorption layers together with a well optimized diluted waveguide allow achieving simultaneously a broad bandwidth (> 26GHz for multiplication factors up to M=7-8) and a high responsivity of Rmax = 13.4 A/W at 1.55micrometer.