Monolithic Flip-Chip Compatible Twin-IQ Mach-Zehnder Modulators for Hybrid Assembly onto High Capacity Optical Transmitter Boards
Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany
Tagungsband: IPRM 2011
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Kaiser, R.; Velthaus, K. O.; Brast, T.; Maul, B.; Gruner, M.; Klein, H.; Hamacher, M.; Hoffmann, D.; Schell, M. (Fraunhofer Heinrich Hertz-Institut, Einsteinufer 37, 10587 Berlin, Germany)
Inhalt:
This paper reports on the first development, fabrication, and characterization of monolithic InP-based twin-IQ Mach-Zehnder modulator chips as basic building blocks for future high capacity and large scale planar optical Silica-on-Si transmitter boards. The monolithic devices are designed for hybrid assembly by utilizing passive chip alignment techniques in combination with flip-chip bonding technology. Electrical GSG and GS transmission lines have been integrated and connected on InP-based modulator chips for the first time. Very compact and low loss twin-IQ modulators have been demonstrated. Small signal response measurements taken on chip level reveal an overall data chip capacity of 100 Gb/s.