Influence of self-heating on the impact-ionization gate leakage in AlInAs/InGaAs/InP HEMTs

Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany

Tagungsband: IPRM 2011

Seiten: 4Sprache: EnglischTyp: PDF

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Scavennec, André (Apecofi, 25 Bd Arago, 75013 Paris, France)
Maher, Hassan (OMMIC, 2 Chemin du Moulin, 94450 Limeil-Brévannes, France)
Decobert, Jean (Alcatel Thales 3-5Lab, Route de Nozay, 91460 Marcoussis, France)

Excess gate leakage in AlInAs/InGaAs/InP HEMTs, resulting in a hump-shape superimposed to the conventional reverse current characteristics has been documented as originating from holes created by impact ionization in the channel. In some instances an anomalous behaviour has been reported with the appearance of double-hump Ig (Vgs) characteristics: while a first gate current hump appears close to pinch-off, a second hump shows up in open channel conditions, at higher drain voltages. In this paper, we show this feature of the gate leakage can be ascribed to the device self-heating, and the open-channel hump can be used to monitor the channel temperature.