High Current Gain of Doping-Graded GaAsSb/lnP DHBTs

Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany

Tagungsband: IPRM 2011

Seiten: 3Sprache: EnglischTyp: PDF

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Wu, Bing-Ruey; Dvorak, Martin W.; Colbus, Patrick; Low, Tom S.; D'Avanzo, Don (Technology Leadership Organization - High Frequency Technology Center (HFTC), Agilent Technologies, Inc., 1400 Fountaingrove Parkway, Santa Rosa, CA 95403, USA)

It is demonstrated that GaAsSb:C doping grade improves device DC current gain in GaAsSb/InP DHBTs. A β versus base sheet resistance curve is established to examine the effectiveness of various base grading schemes compared to a uniformly doped baseline. The results indicate a 20 % increase in β with the doping grade compared to the baseline.