Long wavelength emission from nano-cone structures with embedded single InAs/InGaAlAs quantum dots grown on InP substrates

Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany

Tagungsband: IPRM 2011

Seiten: 4Sprache: EnglischTyp: PDF

Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt

Hermannstädter, C.; Huh, J.-H.; Jahan, N. A.; Sasakura, H.; Suemune, I. (Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan)
Huh, J.-H.; Sasakura, H.; Suemune, I. (CREST, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan)
Jahan, N. A. (Graduate School of Information Science Technology, Hokkaido University, Sapporo 060-0814, Japan)

In this work we present a way to use high density quantum dots (QDs) as a possible source for single photons and entangled photon pairs by isolating a small number of dots in suitable nanostructures which, themselves, offer a favorable geometry and interface design for highly efficient luminescence extraction. InAs/InGaAlAs QDs grown on InP substrates are chosen as emitters in the spectral range between 1.2 and 1.6 µm. Low temperature luminescence from individual dots is shown in the spectral range between 1.3 and 1.4 µm. Emission in the longer wavelength range can be achieved by temperature tuning up to 160 K and changing the deposited amount of InAs (active QD layer) up to six monolayers. The accessible spectral range includes the telecommunication wavelength of 1.55 µm which makes such devices good candidates for application in fiber communication networks.