Effect of MOVPE Growth Conditions on The Formation of Self-Organized InAs/InGaAsP/InP Quantum Dots

Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany

Tagungsband: IPRM 2011

Seiten: 4Sprache: EnglischTyp: PDF

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Wenning, Felix; Kuenzel, Harald (Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institut, Berlin, Germany)
Pohl, Udo W. (Institut für Festkörperphysik, Technische Universität Berlin, Berlin, Germany)

Structural characteristics of uncapped InAs/InGaAsP dots were evaluated based on a simple approach using image processing of atomic-force micrographs. Height, mean area, ensemble density, and shape of the dots were determined. On this basis a systematic study of the effect of growth temperature and growth interruption as the main parameters that influence the formation of the dots was performed. With a PL analysis of buried QDs deposited in the same run with the same growth conditions a correlation between optical and structural characteristics was developed. On this basis comparison of modelled transition energies with experimental data was made possible.