Analysis of in situ reflectance spectra and performance of InGaAs/GaAsP quantum-well solar cells: towards a comprehensive understanding of strain accumulation influence on solar cell properties
Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany
Tagungsband: IPRM 2011
Seiten: 4Sprache: EnglischTyp: PDF
Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Autoren:
Wang, Yunpeng; Wen, Yu; Nakano, Yoshiaki (Research Center for Advanced Science and Technology, the University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan)
Sugiyama, Masakazu (Department of Electrical Engineering and Information Systems, School of Engineering, the University of Tokyo, Japan)
Inhalt:
A strain-balanced InGaAs/GaAsP multiple quantum-wells (MQWs) structure was grown with metal organic vapor phase epitaxy (MOVPE) on GaAs substrate towards enhanced current gain by extending adsortion range. In our previous investigation, it has been verified that growth of such a hetero-structure can be diagnosed by periodical oscillation of transient reflectance spectra: an excess amount of strian accumulation (SA) would derive lattice relaxation in MQWs and degrades surface mophology, resulting in a decay in surface reflectance. In this report, we applied a series of detailed 'in situ' mornitoring of transient reflectance spectra (RS). According to a combined analysis of transient RS in a course of p-i-n MQWs solar cell growth and spectral response measurement, a comprehensive understanding can be offered to explain SA process through the whole p-i-n hetero-layer, and its influence on solar cell properties.