High sensitivity graphite-Pd (Pt) nanoparticles-InP Schottky diode hydrogen sensor
Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany
Tagungsband: IPRM 2011
Seiten: 4Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Yatskiv, R.; Grym, J.; Zdansky, K. (Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, Chaberska 57, 18251 Prague 8, Czech Republic)
Piksova, K. (Department of Physical Electronics, Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, Brehova 7,115 19 Prague 1, Czech Republic)
Hydrogen sensing characteristics of graphite-Pd(Pt)/InP Schottky diodes fabricated by electrophoretic deposition technique were investigated. The proposed hydrogen sensors showed relatively high sensitivity response of ~106 to 1000 ppm H2 in N2. The barrier height reduction due to hydrogen exposure was 0.35 eV and 0.37 eV for Pd and Pt based Schottky diodes respectively. Temperature dependence of the sensitivity, the barrier height variation, the ideality factor and the barrier height itself were studied. Pt based Schottky diodes show better sensitivity and shorter recovery times compared to Pd ones.