High-speed and high-power InGaAs/InP photodiode

Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany

Tagungsband: IPRM 2011

Seiten: 4Sprache: EnglischTyp: PDF

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Yang, Hua; Daunt, Chris; Lee, Kohsin; Han, Wei; Gity, Farzan; Corbett, Brian; Peters, Frank H. (Tyndall National Institute, UCC, Lee Maltings/Cork, Ireland)
Daunt, Chris; Peters, Frank H. (Physics Department, University College Cork, Cork, Ireland)

The. photodiode (PD) is a key component in optical transmission and optical measurement systems. In this paper, we present an InP-based InGaAs Uni-traveling Carrier (UTC) PD designed and fabricated for high speed and high power applications. A UTC PD with a 40micrometer waveguide shows a 3dB bandwidth up to 40GHz and photocurrents of up to 10mA without saturation in our measurement range.