Uniform BCB Bonding Process Toward Low Propagation Loss in GaInAsP Photonic Wire Waveguide on Si Wafer
Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany
Tagungsband: IPRM 2011
Seiten: 4Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Maeda, Yasuna; Lee, Jieun; Atsumi, Yuki; Nishiyama, Nobuhiko; Arai, Shigehisa (Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1-S3-12 O-okayama, Meguro-ku, Tokyo 152-8550, Japan)
Arai, Shigehisa (Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S3-12 O-okayama, Meguro-ku, Tokyo 152-8550, Japan)
To realize optical integrated circuits on LSI with membrane structure of III-V material, we have investigated GaInAsP wire waveguide instead of global electrical wire which will be the bottleneck of LSI performance limitation. This time, fabrication process and characteristics of GaInAsP wire waveguides on Si substrate by adhesive bonding using benzocyclobutene (BCB) were investigated. A good bonding interface between SiO2 and BCB with no air-void was achieved by extending pre-cure time of BCB. By using improved BCB bonding conditions, propagation loss of 460 x 150 nm2 GaInAsP wire waveguide on Si substrate at λ=1.55 µm was reduced to 17 dB/cm which is a record low propagation loss in III-V material wire waveguides propagating at mm-order.