Fundamental Oscillation up to 1.08 THz in Resonant Tunneling Diodes with High Indium Composition Transit Layers
Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany
Tagungsband: IPRM 2011
Seiten: 4Sprache: EnglischTyp: PDF
Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Autoren:
Teranishi, A.; Shizuno, K.; Suzuki, S.; Asada, M. (Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1-S9-3 O-okayama, Meguro-ku, Tokyo 152-8552, Japan)
Sugiyama, H.; Yokoyama, H. (NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan)
Inhalt:
Fundamental oscillations up to 1.08 THz with the output power of 5.5 muW was achieved at room temperature in GaInAs/AlAs resonant tunneling diodes (RTDs) with thin barriers, graded emitter, and high indium composition transit layers. A possible increase in collector transit time due to the Γ-L transition has been discussed in the RTDs oscillating at 1.04 THz reported recently, in which the graded emitter was introduced to suppress this transition with a reduced electric field. In this paper, high indium composition transit layers were adopted in addition to the graded emitter for further reduction in collector transit time with large Γ-L separation as well as with the increment of the launching velocity. From the comparison between the measured and theoretical results, the collector transit time was estimated to be slightly reduced by the addition of this structure.