Photoluminescence peak wavelength behavior of InAs/InGaAsP/InP quantum dots structure

Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany

Tagungsband: IPRM 2011

Seiten: 4Sprache: EnglischTyp: PDF

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Fukuda, Ayako; Esaki, Miyuki; Akimoto, Mio; Imai, Hajime (Faculty of Science, Japan Women’s University, 2-8-1 Mejirodai,Bunkyo-ku, Tokyo, 112-8681 Japan)

We measured the photoluminescence (PL) spectra of InAs/InGaAsP/InP quantum dots (QD) structures. We examined the relationship between the sample temperature and PL peak wavelength. The polarization of the excitation light was changed from the TM mode to the TE mode. We compared relations of a shift of the PL peak wavelength to the excitation light power under TM mode and TE mode excitation. We considered that the phenomenon like the band filling effect is larger for TE mode.