Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectric
Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany
Tagungsband: IPRM 2011
Seiten: 3Sprache: EnglischTyp: PDF
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Autoren:
Morassi, Luca; Verzellesi, Giovanni (DISMI, University of Modena and Reggio Emilia, Reggio Emilia, Italy)
Pavan, Paolo (DII, University of Modena and Reggio Emilia, Modena, Italy)
Veksler, Dmitry; Ok, Injo; Bersuker, Gennadi (SEMATECH, Austin, TX, and Albany, NY, USA)
Zhao, Han; Lee, Jack C. (Department of Electrical and Computer Engineering, The University of Texas at Austin, TX, USA)
Inhalt:
We analyze the electrical behavior of buried-channel InGaAs MOS-HEMTs with Al2O3 gate dielectric by means of measurements and numerical device simulations, with the aim of pointing out peculiar aspects that can be critical for device design/optimization purposes. Our analysis focuses in particular on effects associated with traps at the dielectric/barrier interface and unintentional doping in the buffer layer, showing their combined impact on crucial device parameters like threshold voltage, subthreshold slope and drain-bias dependence of subthreshold drain current.