Application of HICUM/L0 to InP DHBTs using single-transistor parameter extraction

Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany

Tagungsband: IPRM 2011

Seiten: 4Sprache: EnglischTyp: PDF

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Nardmann, Tobias; Lehmann, Steffen; Schröter, Michael (Dresden University of Technology, Chair for Electr. Dev. and Integr. Circ., 01062 Dresden, Germany)
Schröter, Michael (UC San Diego, La Jolla, CA, USA)
Driad, Rachid (Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg , Germany)

The suitability of the compact model HICUM for modeling III-V HBTs is evaluated. For this purpose, a complete parameter extraction for HICUM/L0 is performed using single-transistor extraction routines. The suitability of some of these methods is discussed and the best available ones are identified. Model results are presented and compared with measurements. Good agreement is obtained demonstrating the fundamental suitability of HICUM for InP DHBTs and supporting the deployment of this technology.