Strain control using GaxIn1-xAs second cap layer during double-cap procedure in InAs / InP QDs structure

Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany

Tagungsband: IPRM 2011

Seiten: 4Sprache: EnglischTyp: PDF

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Hirooka, M.; Kawashima, F.; Iwane, Y.; Saegusa, T.; Shimomura, K. (Department of Engineering and Applied Sciences, Sophia University, 7-1 Kioi-Cho, Chiyoda-Ku, Tokyo 102-8554, Japan)

We have successfully demonstrated the strain control of the self assembled Stranski - Krastanov (S-K) InAs quantum dots (QDs) using double-cap procedure. GaxIn1-xAs second cap layer was introduced to compensate the strain of InAs QDs, and obtained the Ga composition of GaxIn1-xAs second cap layer to increase the PL intensity and to minimize the fluctuation of QDs size.