InP-Based Self-Aligned Internally Series-Connected RTD/HBT for Threshold Gate ICs
Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany
Tagungsband: IPRM 2011
Seiten: 3Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Park, Jaehong; Lee, Jongwon; Lee, Jooseok; Jeong, Yongsik; Yang, Kyounghoon (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-Dong, Yuseong-Gu, Daejeon, Republic of Korea)
An internally series-connected RTD (Resonant Tunneling Diode)/HBT (Heterojunction Bipolar Transistor) technology using an etch back process with a self-aligned base metallization has been proposed. The proposed device shows a reduced peak voltage compared to the externally series-connected device (from 0.88 to 0.77 V). The reduced parasitic resistance values are estimated to be in a range of 10~12 Ohm. To demonstrate an applicability of the developed approach to a basic digital gate, a threshold gate has been implemented. At a clock frequency of 3 GHz, the threshold gate IC exhibits the correct performance characteristics.