100nm-gate-Iength In0.47Ga0.53As multi-gate MOSFET: fabrication and characterisation
Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany
Tagungsband: IPRM 2011
Seiten: 4Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Mo, J. J.; Wichmann, N.; Roelens, Y.; Zaknoune, M.; Desplanque, L.; Wallart, X.; Bollaert, S. (IEMN, UMR-CNRS 8520, University Lille 1, Avenue Poincaré, BP 60069, 59652 Villeneuve d'Ascq Cedex, France)
In this paper, multi-gate In0.47Ga0.53As MOSFETs with different numbers of fingers (4, 8 and 16) and different gate length were fabricated by using air-bridge technology. The devices were made by self-aligned method with gate deposition at first. For MOSFET with a gate length of 100nm, a maximum drain current of 120mA/mm, and a maximum transconductance of 75mS/mm were achieved at room temperature. A cut-off frequency of 100GHz, and a maximum oscillation frequency of 31GHz were extracted for device with 16 fingers.