Characterization of thin film resistors and capacitors integrated on GaAs membranes for submillimeter wave circuit applications
Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany
Tagungsband: IPRM 2011
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Zhao, Huan; Do, Thanh Ngoc Thi; Sobis, Peter; Tang, Aik-Yean; Yhland, Klas; Stenarson, Jörgen; Stake, Jan (GigaHertz Centre, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296, Göteborg, Sweden)
Zhao, Huan; Do, Thanh Ngoc Thi; Sobis, Peter; Tang, Aik-Yean; Stake, Jan (Terahertz and Millimetre Wave Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296, Göteborg, Sweden)
Sobis, Peter (Omnisys Instruments AB, V. Frölunda, Sweden)
Yhland, Klas; Stenarson, Jörgen (SP Technical Research Institutes of Sweden, Borås, Sweden)
Inhalt:
In this paper we describe the fabrication and characterization of thin film resistors and capacitors integrated on a 3 µm thick GaAs membrane. The thin film resistors and capacitors are based on NiCr and SiNx materials respectively. Onwafer probing DC characterization of these thin film components was performed before removing the GaAs substrate. The corresponding high frequency characterization in the WR-03 frequency band (220-325 GHz) was demonstrated utilizing a membrane-based two-port TRL calibration technique. The measurement results have shown a good agreement with the simulation.