High Output Power (~400 f..lW) Oscillators at Around 550 GHz Using Large Area RTD and Optimized Antenna Structure

Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany

Tagungsband: IPRM 2011

Seiten: 4Sprache: EnglischTyp: PDF

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Shiraishi, M.; Shibayama, H.; Ishigaki, K.; Suzuki, S.; Asada, M. (Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1-S9-3 Ookayama, Megaro, Tokyo 152-8552, Japan)
Sugiyama, H.; Yokoyama, H. (NTT Photonics Laboratories, NTT Corporation, 3-1 Morisonosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan)

We report a room temperature operation of resonant tunneling diode (RTD) oscillators with high output power of around 400 muW at frequencies of 530-590 GHz, using large-area RTDs and an optimized structure of offset-fed slot antennas. The highest output power obtained in this study was 420 muW at 548 GHz for a single RID with a peak current density of 24 mA/µm2; the RTD was placed 58 µm apart from the center of a 130-µm-long slot antenna.