X-ray diffraction characterization of polycrystalline InP films grown by molecular-beam deposition: Estimation of stacking-fault probability

Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany

Tagungsband: IPRM 2011

Seiten: 3Sprache: EnglischTyp: PDF

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Kajikawa, Y.; Iseki, Y.; Matsui, Y. (Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishi-Kawatsu, Matsue, Shimane 690-8504, Japan)

X-ray diffraction characterization was performed on polycrystalline InP films deposited on glass substrates by molecular-beam deposition at substrate temperatures of 200, 250, and 320deg C. The peak shift analysis developed for estimating stacking-fault probability in fcc metals is applied to cubic semiconductors for the first time. The net stacking-fault probabilities alphaSF(hkl) = α ISF(hkl) - α ESF(hkl) (alphaISF(hkl) and alphaESF(hkl)) being intrinsic and extrinsic stacking-fault probabilities, respectively) together with the fractional changes epsilonSF(hkl) in interplanar spacing at the stacking fault for (111)- and (100)-oriented crystallites are presented as a function of the substrate temperature.