Single Wavelength (Non-Grating) High-Mesa Asymmetric Active-MMI All Optical Bi-Stable Laser Diodes
Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany
Tagungsband: IPRM 2011
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Jiang, H.; Chaen, Y.; Hagio, T.; Tsuruda, K.; Jizodo, M.; Hamamoto, K. (Interdisciplinary Graduate School of Eng. Sciences (I-EggS), Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan)
Matsuo, S. (NTT photonics laboratories, 3-1 Morinosato Wakamiya, 243-0198, Japan)
Inhalt:
High-mesa asymmetric active-MMI bi-stable laser diodes are proposed and demonstrated that resulted in singlewavelength emission (λ=1556nm, SMSR=30dB, non-grating), with all optical bi-stable switching operation, for the first time.