8-channel AWG-based multiwavelength laser fabricated in a multi-project wafer run
Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany
Tagungsband: IPRM 2011
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Lawniczuk, K.; Smit, M. K.; Leijtens, X. J. M. (COBRA research institute, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven, The Netherlands)
Lawniczuk, K.; Piramidowicz, R.; Szczepanski, P. (Warsaw University of Technology, Faculty of Electronics and Information Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw, Poland)
Szczepanski, P. (National Institute of Telecommunications, Szachowa 1, 04-894 Warsaw, Poland)
Williams, P. J.; Wale, M. J. (Oclaro Technology Ltd., Caswell, Towcester, Northamptonshire, NN12 8EQ, UK)
Inhalt:
We demonstrate one of the first monolithically integrated multiwavelength lasers fabricated in an industrial fab exploring a generic foundry model. The lasers were realized by participating in multi-project wafer run. We present 8-channel sources that use arrayed-waveguide gratings (AWGs) as intra-cavity filters, in two configurations, with and without booster amplifier. The devices operate in the third telecommunication window, around 1.55micrometer. The measured optical output power is up to 5dBm with side mode suppression ratio (SMSR) better than 40 dB. Our lasers were fabricated on an indium phosphide (InP) based platform.