Hermetic Glass-Thin-Film for Wafer-Level-Packaging of Sensors and ICs

Konferenz: MikroSystemTechnik - KONGRESS 2011
10.10.2011 - 12.10.2011 in Darmstadt, Deutschland

Tagungsband: MikroSystemTechnik

Seiten: 4Sprache: EnglischTyp: PDF

Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt

Leib, Jürgen; Hansen, Ulli; Maus, Simon (MSG Lithoglas AG, Berlin, Deutschland)
Zoschke, Kai; Hauck, Karin; Töpper, Michael (Fraunhofer IZM, Berlin, Deutschland)

Borosilcate glass thin-films with a thickness of a few micrometers are used as dielectric passivation and as bond interface for anodic bonding of substrates. The glass thin-film enables direct hermetic passivation of semiconductors on wafer- level. For MEMS packaging the Lithoglas layer is replacing conventional glass wafers acting as anodic bondable layer when performing wafer-level capping of MEMS devices thus enabling stress compensated designs as well as further miniaturization of the devices - in our example for wafer-level integration of two silicon wafers. The new process allows for very moderate bond parameters with bond voltages in the range of 30 - 60 V at standard bond temperatures of around 300 °C and below. This enables the use of anodic bonding also for sensitive devices.