Holistic Approach to Maximize Power Density in Industrial Inverter Designs
Konferenz: CIPS 2012 - 7th International Conference on Integrated Power Electronics Systems
06.03.2012 - 08.03.2012 in Nuremberg, Germany
Tagungsband: CIPS 2012
Seiten: 6Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Schulz, Martin (Infineon Technologies Warstein, Germany)
Lillo, Liliana De; Empringham, Lee (University of Nottingham, Nottingham, UK)
Cost pressure, along with the urge to reduce the resources per kilowatt installed has lead to a constant increase in power density in industrial inverter design. Though semiconductors usually are not the most space consuming components, semiconductor manufacturers support this trend. Current carrying capabilities for both, power modules and silicon dies has grown from generation to generation. New wide band gap materials like GaN and SiC today allow for further advances. The present paper deals with the possibilities arising from a holistic approach focusing on new power semiconductors, compact control electronics along with a different view to topologies and innovative thermal management. Measurements and designs presented are based on an inverter featuring a power density of 20kW/liter.