Development of high temperature packaging technologies for SiC power devices based on finite elements simulations and experiments: thermal approach
Konferenz: CIPS 2012 - 7th International Conference on Integrated Power Electronics Systems
06.03.2012 - 08.03.2012 in Nuremberg, Germany
Tagungsband: CIPS 2012
Seiten: 6Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Zhang, L.; Azzopardi, S.; Gracia, A.; Woirgard, E.; Deletage, J.-Y. (Univ. Bordeaux, IMS, UMR 5218, 33400 Talence, France)
Devices based on wide-band gap semiconductors such as SiC, GaN allow high power densities, size reduction, high integration and elevated operating temperatures. In this study, we present solutions for high temperature power packages based on finite element simulations and experimental approach. Analytical methods are used to investigate the best choice among the different selected materials for the substrates, the solder joints and the baseplate. Various power assemblies using SiC diodes have been fabricated. Their thermal performances are evaluated through the measurements of the thermal impedance and the thermal resistance and also finite elements simulations. The correlation between the simulation results and the experimental ones are discussed.