Wafer-level fabrication of high-power-density MEMS passives based on silicon molding technique
Konferenz: CIPS 2012 - 7th International Conference on Integrated Power Electronics Systems
06.03.2012 - 08.03.2012 in Nuremberg, Germany
Tagungsband: CIPS 2012
Seiten: 5Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Li, Jiping; Xie, Huikai (Department of Electrical and Computer Engineering, University of Florida, USA)
Ngo, Khai D. T.; Lu, Guo-Quan (Department of Electrical and Computer Engineering, Virginia Tech, USA)
This paper reports a novel MEMS fabrication technology that can integrate toroidal inductors or transformers into silicon substrate. Such toroidal windings are realized by electroplating copper to form 200micrometer-deep through-silicon vias (TSVs) and 60micrometer-thick copper lines on both sides of the silicon substrate. Meanwhile, the magnetic core is formed by filling deep silicon trenches with a composite of magnetic powders and a polymer. A 13 x 13 x 0.32 mm3 toroidal inductor with a measured inductance of 160 nH has been fabricated. The Q factor of this inductor is 10.5 at 14 MHz. Toroidal transformers with Polyimide as the dielectric material between stacked windings were also fabricated.