Application of eGaN FETs for highly efficient Radio Frequency Power Amplifier

Konferenz: CIPS 2012 - 7th International Conference on Integrated Power Electronics Systems
06.03.2012 - 08.03.2012 in Nuremberg, Germany

Tagungsband: CIPS 2012

Seiten: 6Sprache: EnglischTyp: PDF

Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt

Cucak, D.; Vasic, M.; García, O.; Oliver, J. A.; Alou, P.; Cobos, J. A. (Universidad Politécnica de Madrid, José Gutierrez Abascal 2, 28006 Madrid, Spain)

In this paper, application of new technological solution for power switches based on Gallium Nitride (GaN) in Envelope Amplifier for Radio Frequency Power Amplifier is proposed. The goal of this application is the efficiency enhancement at high switching frequency, due to superior conductivity and switching characteristics of enhancement mode GaN FETs over Si devices. Experimental results provided comparison between the performance of GaN FETs on one hand and standard Si MOSFETs and LDMOS transistors on the other. Advantages of GaN devices were experimentally verified as well as the operating conditions (regarding the output power and switching frequency) where these advantages exist.