Novel Memristive Charge- and Flux-Based Sensors

Inhalt:
The fourth fundamental circuit element, memristor, is characterized by its electrical memory resistance (memris- tance), which is a function of the charge/flux. In this paper, using the unique ability of a memristor to record the historic profile of the applied current/voltage via its memristance, we propose novel memristive charge- and flux-based sensing schemes. Using a memristor, the capacitance, inductance, and power measurements are reduced to a resistance measurement. The proposed method seeks a memristive behavior with a constant modulation of the memristance (memductance) with respect to the charge (flux). We further demonstrate a charge-based capacitance sensor using a TiO2 memristor. To have the possibility of both charge- and flux- based sensing, we suggest spintronic memristors based upon the current-driven dynamics of magnetic domain walls. Index Terms—Memristive sensing, domain wall-based memris- tor, spintronic