Novel Memristive Charge- and Flux-Based Sensors

Konferenz: PRIME 2012 - 8th Conference on Ph.D. Research in Microelectronics & Electronics
12.06.2012-15.06.2012 in Aachen, Germany

Tagungsband: PRIME 2012

Seiten: 4Sprache: EnglischTyp: PDF

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Mahmoudi, Hiwa; Sverdlov, Viktor; Selberherr, Siegfried (Institute for Microelectronics, Technische Universität Wien, Gußhausstraße 27–29/E360, 1040 Wien, Austria)

The fourth fundamental circuit element, memristor, is characterized by its electrical memory resistance (memris- tance), which is a function of the charge/flux. In this paper, using the unique ability of a memristor to record the historic profile of the applied current/voltage via its memristance, we propose novel memristive charge- and flux-based sensing schemes. Using a memristor, the capacitance, inductance, and power measurements are reduced to a resistance measurement. The proposed method seeks a memristive behavior with a constant modulation of the memristance (memductance) with respect to the charge (flux). We further demonstrate a charge-based capacitance sensor using a TiO2 memristor. To have the possibility of both charge- and flux- based sensing, we suggest spintronic memristors based upon the current-driven dynamics of magnetic domain walls. Index Terms—Memristive sensing, domain wall-based memris- tor, spintronic