K-Band Passive Mixer based on Complementary Transistors in 130 nm CMOS Technology

Konferenz: PRIME 2012 - 8th Conference on Ph.D. Research in Microelectronics & Electronics
12.06.2012-15.06.2012 in Aachen, Germany

Tagungsband: PRIME 2012

Seiten: 4Sprache: EnglischTyp: PDF

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Zhang, T.; Subramanian, V.; Boeck, G. (Microwave Engineering Laboratory, Berlin Institute of Technology, Berlin, Germany)

A passive down-conversion mixer for Kband application is designed and fabricated in a 130 nm CMOS process. Complementary switch transistors are implemented to reduce the conversion loss and LO power requirement. After de-embedding the IF output buffer, the voltage conversion loss of the mixer is 2~5 dB at 21~26 GHz with the LO power of 0 dBm. The input 1 dB compression point is -3 dBm. The measurement results are compared with state-of-the-art realizations in this frequency band. Index Terms — passive mixer, K-band, 24 GHz, CMOS MMIC, complementary switches