CMOS Transistors under Uniaxial Stress on Ultra-Thin Chips for Applications in Bendable Image Sensors

Konferenz: PRIME 2012 - 8th Conference on Ph.D. Research in Microelectronics & Electronics
12.06.2012-15.06.2012 in Aachen, Germany

Tagungsband: PRIME 2012

Seiten: 4Sprache: EnglischTyp: PDF

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Häfner, J.; Mokwa, W. (Institute of Materials in Electrical Engineering I, RWTH Aachen University, Aachen, Germany)
Dogiamis, G.; Hosticka, B.; Grabmaier, A. (Chair of Electronic Devices and Circuits (EBS), University Duisburg-Essen, Duisburg, Germany)

In this work characteristics of CMOS transistors on ultra-thin silicon chips embedded into a polyimide foil are discussed. The thinning and the encapsulation processes are presented and the piezoresistive coefficients of both n- and pMOS transistors are experimentally determined. Moreover, the dependence of the threshold voltage and subthreshold slope on uniaxial tensile and compressive stress is examined. Keywords - flexible ultra-thin silicon chips; uniaxial stress; bending machine;piezoresistance; chip-in-foil