Analysis of harmonic networks in Class-F and inverse Class-F RF Power Amplifiers
Konferenz: PRIME 2012 - 8th Conference on Ph.D. Research in Microelectronics & Electronics
12.06.2012-15.06.2012 in Aachen, Germany
Tagungsband: PRIME 2012
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Montesinos, Ronald; Berland, Corinne; Abi Hussein, Mazen; Venard, Olivier (LaMIPS, Laboratoire commun NXP-CRISMAT UMR 6508 CNRS ENSICAEN UCBN, Caen, France )
Descamps, Philippe (LaMIPS, Laboratoire commun NXP-CRISMAT UMR 6508 CNRS ENSICAEN UCBN, Caen, France)
Inhalt:
This paper presents the influence of the input and output harmonics networks of class F and F -1 power amplifiers (PAs) to achieve high efficiency in microwave applications. The analysis and design of PAs are realised on Agilent ADS software. We use for this work a GaN HEMT transistor from Cree. Overall performances are evaluated using as input signal a sine and a 16QAM modulation at 900 MHz with 5.63 dB Peak-to-Average Power Ratio (PAPR). This study shows the advantages and drawbacks of even/odd harmonics in drain curves of these PA classes as well as the tradeoff linearity-efficiency.