Adaptive Readout Circuit for Pinned and Lateral Drift-Field Photo Diodes

Konferenz: PRIME 2012 - 8th Conference on Ph.D. Research in Microelectronics & Electronics
12.06.2012-15.06.2012 in Aachen, Germany

Tagungsband: PRIME 2012

Seiten: 4Sprache: EnglischTyp: PDF

Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt

Süss, Andreas; Hosticka, Bedrich J.; Vogt, Holger (Fraunhofer Institute for Microelectronic Circuits and Systems, Finkenstrasse 61, 47057, Duisburg, Germany)

In this work an adaptive pixel architecture is presented that is enabling a fast and complete transfer of photogenerated charges out of the photoactive area towards the storage node. This provides an improved dynamic range. Furthermore, the proposed circuit yields a high-speed shutter capability for global shutter mode. This is mandatory for sensors designed for high frames rate and for high-speed applications where smear effects are to be avoided. The concept is presented examplarily by simulations done for a 96x6 pixel image sensor, which was later on fabricated in a 0.35 µm technology.