STI CMP stop in Silicon Nitride controlled by FullVision™ endpoint
Konferenz: ICPT 2012 - International Conference on Planarization / CMP Technology
15.10.2012-17.10.2012 in Grenoble, France
Tagungsband: ICPT 2012
Seiten: 5Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Perrot, C.; Del Medico, S.; Gaillard, S.; Hinsinger, O. (STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France)
Pitard, F.; Cui, S.; Lam, G.; Bennett, D. (Applied Materials, 11b Chemin de la Dhuy, 38240 Meylan, France)
For each new CMOS manufacturing technology node, control of the step height between active area and isolation area becomes more and more critical for transistor performance. The main contributor of the step height is the Shallow Trench Isolation Chemical Mechanical Planarization (STI CMP). The remaining silicon nitride thickness post CMP is the main parameter that will guarantee the step height in dense area. In this paper, a new method is proposed to improve CMP process stability by stopping STI CMP process by endpoint. Accurate endpoint process control for CMP is necessary for stopping in materials. Hence, the FullVision(TM) optical endpoint technology system is selected and used to control this silicon nitride thickness film. This FullVisionTM system is a white-light endpoint which collects full spectra of wafers in-situ during polishing. Different algorithms and library wafers have been evaluated in order to achieve a single algorithm for all sets of product /masks. Finally, a gain of 50% is achieved on the step height lot to lot variation. Keywords: Step Height, Shallow Trench Isolation, Chemical Mechanical Planarization, FullVision(TM) endpoint system, White-light endpoint, Stop-in-nitride polish.