Effect of Slurry Chemistry on W CMP Performance
Konferenz: ICPT 2012 - International Conference on Planarization / CMP Technology
15.10.2012-17.10.2012 in Grenoble, France
Tagungsband: ICPT 2012
Seiten: 5Sprache: EnglischTyp: PDFPersönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Kang, Mincheol; Kim, Kyungbo; Jung, Taeyeon; Park, Hyungsoon; Kim, Hyunghwan; Kang, Hyosang (DRAM Process C&C Team, R&D Division, SK Hynix Inc., 2091 Gyeongchung-daero, Bubal-eub, Icheon-si, Gyeonggi-do, 467-701, Korea)
The removal mechanism of metal is firstly suggested by Kaufman. In metal CMP, especially tungsten, a key step is W oxide formation on W Surface. Thus, the oxidizer is the most important component of slurry. Hydrogen peroxide (H2O2) that has a higher reduction potential is widely used as oxidizer. We could observe that slurry chemistries can affect to the CMP feature. The fundamentals of W CMP have not been fully understood. In this paper, the effect of slurry chemistry on W CMP performance such as tungsten oxide formation was investigated through surface analysis and electrochemical analysis.