Processing Properties of Strong Oxidizing Slurry and Effect of Processing Atmosphere in SiC-CMP

Konferenz: ICPT 2012 - International Conference on Planarization / CMP Technology
15.10.2012-17.10.2012 in Grenoble, France

Tagungsband: ICPT 2012

Seiten: 6Sprache: EnglischTyp: PDF

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Yin, Tao; Wang, Zhida; Tan, Zhe (Department of Mechanical Engineering Graduate School of Engineering Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, Japan)
Doi, Toshiro; Kurokawa, Syuhei; Yamazaki, Tsutomu (Department of Mechanical Engineering, Faculty of Engineering Kyushu University, Japan)
Ohnishi, Osamu (Department of Mechanical Engineering Faculty of Engineering University of Miyazaki, Japan)

In order to achieve high removal rate and high-quality processing on SiC wafer, we carried out the CMP experiment with the new type CMP machine (Bell-jar) by using the slurry with strong oxidant(KMnO4). We realize the high speed CMP processing by changing the amount of oxidant, slurry pH, abrasive concentration, rotation speed, and the processing atmosphere. By using strong oxidant agent, a high removal rate can be obtained on C-face, so we can consider that C-face of SiC wafer can easily be oxidized. On Si-face of SiC wafer, however, the removal rate depends on pH and abrasive concentration, because a high oxidization speed can inhibit the CMP process. The processing mechanism of slurry by adding KMNO4 is discussed and one of the most effective processing conditions for SiC-CMP is proposed. Keywords: CMP, Simultaneous Double-Sided Polishing, Processing Atmosphere, CMP Machine, SiC Wafer, Removal Rate.