Self-Heating Effects in Nano-Scaled MOSFETs and Thermal-Aware Compact Models for the SOI CMOS Generation of 2015

Konferenz: Zuverlässigkeit und Entwurf - 7. ITG/GI/GMM-Fachtagung
24.09.2013 - 26.09.2013 in Dresden, Deutschland

Tagungsband: Zuverlässigkeit und Entwurf

Seiten: 8Sprache: EnglischTyp: PDF

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Autoren:
Burenkov, Alex; Lorenz, Jürgen (Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Erlangen, Germany)

Inhalt:
The self-heating of MOSFETs scaled according to ITRS specifications for the years 2011 to 2019 is investigated using numerical TCAD simulations. The local warming-up due to self-heating in SOI based transistors can rise the temperature in the active region of such transistors by more than 100 K and must be considered in IC design. To account for thermal effects at the stage of circuit design, thermal-aware BSIMSOI4 compact models were extracted for SOI-MOSFETs from the results of numerical TCAD simulations.