Partial Discharge Assessment on IGBT Based Power Modules through Transfer Function Method: A Diagnostic Approach
Konferenz: Internationaler ETG-Kongress 2013 – Energieversorgung auf dem Weg nach 2050 - Symposium 1: Security in Critical Infrastructures Today
05.11.2013 - 06.11.2013 in Berlin, Deutschland
Tagungsband: Internationaler ETG-Kongress 2013 – Energieversorgung auf dem Weg nach 2050
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Arumugam, Saravanakumar; Schoenemann, Thomas (HV Lab, University of Rostock, Germany)
Gorchakov, Sergey; Weltmann, Klaus-Dieter (Leibniz-Institute for Plasma Science and Technology e.V., Greifswald, Germany)
Inhalt:
The present study investigates on alternative partial discharge (PD) assessment methods in discriminating faulty conditions of medium voltage insulated gate bipolar transistor (IGBT) power modules. In particular, the possibilities of employing transfer function (TF) method in dielectric condition assessment and PD characterization of IGBT modules are explored and reported. The objectives of the present study are resolved on selected test samples of IGBT based modules that have passed/qualified as ‘fit’ via accelerated reliability tests. Initially, the selected test samples (IGBT modules) are subjected to PD measurements and their respective QIEC level and phase resolved PD (PRPD) pattern are recorded. Depending upon QIEC level and PRPD pattern, the test samples are qualitatively ranked. Subsequently, the excitation and PD signals are unfurled in frequency domain and their respective transfer function is computed and analyzed.