Performance of a Marchand balun at Q band in Silicon Germanium (SiGe) technology

Konferenz: GeMiC 2014 - German Microwave Conference
10.03.2014 - 12.03.2014 in Aachen, Germany

Tagungsband: GeMiC 2014

Seiten: 4Sprache: EnglischTyp: PDF

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Autoren:
Boglione, Luciano; Goodman, Joel (Naval Research Laboratory, Washington, DC 20375, USA)

Inhalt:
The paper reports on the design and characterization at Q band of a compact, integrated Marchand balun with state-of-the-art performance. The balun’s goal is to bring a differential signal delivered by a medium power amplifier (PA) stage to a single-ended output pad. The balun must allow a DC source to bias the PA stage. The practical design constraints on the balun are discussed and a simple, yet effective, design methodology is suggested. The balun has been EM-simulated as a 4-port network to account for the DC input before fabricating it in IBM’s SiGe 8HP process. Experimental results confirm the design approach.