Fully Differential 40 GHz Amplifier for LO Distribution circuitry in 90 nm CMOS Technology

Konferenz: GeMiC 2014 - German Microwave Conference
10.03.2014 - 12.03.2014 in Aachen, Germany

Tagungsband: GeMiC 2014

Seiten: 4Sprache: EnglischTyp: PDF

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Autoren:
Malignaggi, Andrea; Hamidian, Amin; Boeck, Georg (Microwave Engineering Lab, Berlin Institute of Technology, Berlin, Germany)
Boeck, Georg (Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik (FBH), Berlin, Germany)

Inhalt:
A fully differential 40 GHz amplifier in 90 nm CMOS technology thought to be used in a LO distribution network is presented and discussed in this paper. The amplifier, consisting in a 2-stages cascode amplifier, reaches 14.4 dB small signal gain and 7 dBm saturated output power consuming only 63 mW. The occupied area is 0,47 mm2 pad included. The detailed design procedure and the on-wafer measurement process are presented in this paper.