Bipolar High Power Semiconductors for efficient HVDC Energy Transmission in Super Grids
Konferenz: International ETG Congress 2015 - Die Energiewende - Blueprints for the new energy age
17.11.2015 - 18.11.2015 in Bonn, Germany
Tagungsband: International ETG Congress 2015
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Schenk, Mario; Przybilla, Jens; Kellner-Werdehausen, Uwe; Barthelmess, Reiner (Infineon Technologies Bipolar GmbH & Co. KG, Max-Planck-Str. 5, 59581 Warstein, Germany)
Dorn, Joerg; Sachs, Guenter; Uder, Markus; Voelkel, Stefan (Siemens AG, Transmission Solutions, Guenther-Scharowsky-Str. 2, 91058 Erlangen, Germany)
Inhalt:
The outstanding performance and technologies of state-of-the-art high power thyristors and diodes for applications like HVDC, FACTS or large drives are described. HVDC transmission systems up to 11 GW and voltages of ±1100 kV are planned and drives in the power range up to 100 MW and more are designed and built using those power semiconductors. Different features (e.g. integrated protection functions) or technologies like Low Temperature Sintering (LTS) for highest rating and surge currents at highest blocking voltages are presented. In addition, a new test voltage definition according to application demand is introduced to decrease the number of devices in series connections. Finally, the 6-inch Light Triggered Thyristor (LTT) is presented (Fig. 1).