Dual-Side Ceramic Power Module for Fast Switching Silicon Carbide Transistors
Konferenz: CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems
08.03.2016 - 10.03.2016 in Nürnberg, Deutschland
Tagungsband: CIPS 2016
Seiten: 5Sprache: EnglischTyp: PDF
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Autoren:
Mueter, U.; Hoffmann, K.F. (Helmut Schmidt University, Hamburg, Germany)
Luerkens, P.; Garcia i Tormo, A. (Philips Research, Eindhoven, Netherlands)
Bast, M.; Eisele, R. (University of Applied Science, Kiel, Germany)
Inhalt:
This paper presents a concept for a low-inductance ceramic power module for fast switching silicon carbide transistors where the module is submerged in a cooling liquid. For this approach a design of an inverter half-bridge power module based on a ceramic substrate is proposed. Silver sintering is used to contact the power semiconductors to the substrate and to form the interconnection with the lead-frame. First prototypes have been assembled and tested in a double-pulse setup for characterization of the switching behavior.