Influence of the Magnetic’s Parasitic Capacitance in the switching of High-Voltage Cascode GaN HEMT
Konferenz: CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems
08.03.2016 - 10.03.2016 in Nürnberg, Deutschland
Tagungsband: CIPS 2016
Seiten: 6Sprache: EnglischTyp: PDF
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Autoren:
Galanos, N.; Popovic, J.; Ferreira, J. A. (Electrical Sustainable Energy Department, Delft University of Technology, Delft, The Netherlands)
Gerber, M. (Aeronamic BV, Almelo, The Netherlands)
Inhalt:
In this paper, the influence of the parasitic capacitance of a magnetic component (inductor or transformer) on the switching of 600V cascode GaN HEMT devices is investigated. An analytical switching model is used to analyse the influence and the results are verified by means of an experimental double pulse tester setup. Furthermore, the influence of replacing the diode of the switching cell with an active GaN HEMT switch is analysed in combination with the parasitic capacitance of the magnetic component.