Dynamic body bias for 22 nm FD-SOI CMOS Technology

Konferenz: ANALOG 2016 - 15. ITG/GMM-Fachtagung
12.09.2016 - 14.09.2016 in Bremen, Germany

Tagungsband: ITG-Fb. 266: Analog 2016

Seiten: 5Sprache: EnglischTyp: PDF

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Autoren:
Nedelcu, Stefan; Voelker, Matthias; Klein, Leonhard; Schuhmann, Claudia; Schuhmann, Norbert; Hauer, Johann (Fraunhofer-Institut für Integrierte Schaltungen IIS, Erlangen, Germany)
Reich, Torsten; Rao, Sunil (Fraunhofer-Institut für Integrierte Schaltungen IIS-EAS, Dresden, Germany)

Inhalt:
This paper presents a digitally controlled dynamic body bias voltage generator, designed to explore the performance characteristics of Global Foundries 22 nm FD-SOI CMOS state-of-the-art technology. The key feature is represented by the dynamic behavior of the energy-speed trade-off between static power and local variations, which is determined by applying a variable positive or negative voltage to the transistor’s back-gate. In this design, the negative voltage is in-ternally generated by a charge-pump and the number of external components is then limited to one external buffer capacitor. The back bias voltage can be changed from 2 to -2 V in 1 mus for a maximum well capacitance of 6nF, which corresponds to an active area of 1.8 mm2. The dynamic bias voltage, which is applied to the nMOS and pMOS back-gate, is independently controlled with a digital word, achieving a step-size of 100 mV.