Capacitive Gate Drive Signal Transmission with Transient Immunity up to 300 V/ns

Konferenz: ANALOG 2016 - 15. ITG/GMM-Fachtagung
12.09.2016 - 14.09.2016 in Bremen, Germany

Tagungsband: ITG-Fb. 266: Analog 2016

Seiten: 5Sprache: EnglischTyp: PDF

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Autoren:
Hackel, Jonathan; Seidel, Achim; Wittmann, Juergen; Wicht, Bernhard (Robert Bosch Center for Power Electronics, Reutlingen University, Reutlingen, Germany)

Inhalt:
The increasing slew rate of modern power switches can increase the efficiency and reduce the size of power electronic applications. This requires a fast and robust signal transmission to the gate driver of the high-side switch. This work proposes a galvanically isolated capacitive signal transmission circuit to increase common mode transient immunity (CMTI). An additional signal path is introduced to significantly improve the transmission robustness for small duty cycles to assure a safe turn-off of the power switch. To limit the input voltage range at the comparator on the secondary side during fast high-side transitions, a clamping structure is implemented. A comparison between a conventional and the proposed signal transmission is performed using transistor level simulations. A propagation delay of about 2 ns over a wide range of voltage transients of up to 300 V/ns at input voltages up to 600 V is achieved.